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EAGLE Library Object
|Uploaded by:||Juergen Messerer|
|Remarks:||This library is a part of the archive file m-pad-2.1.zip|
Show other files in the archive
|Download options:||Download whole archive|
( 303.9 KiB )Download original file
( 1,153.0 KiB )Download file converted
to the latest EAGLE format
( 2,969.6 KiB )
|Description:||Fairchild's FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor|
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize
on-state resistance and provide superior switching performance. These devices are particularly suited for low
voltage applications such as notebook computer power management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients are needed.
Features: N-Channel 5.5 A,30 V, RDS(ON)=0.030 W @ VGS=4.5 V RDS(ON)=0.038 W @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 W @ VGS=-4.5 V RDS(ON)=0.072 W @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package.
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